Kwa sababu ya uhaba wa moissanite ya asili, carbudi nyingi za silicon ni za synthetic.Inatumika kama abrasive, na hivi majuzi zaidi kama kiigaji cha semiconductor na almasi cha ubora wa vito.Mchakato rahisi zaidi wa utengenezaji ni kuchanganya mchanga wa silika na kaboni kwenye tanuru ya kustahimili umeme ya grafiti ya Acheson kwenye joto la juu, kati ya 1,600 °C (2,910 °F) na 2,500 °C (4,530 °F).Chembe nzuri za SiO2 katika nyenzo za mimea (km maganda ya mpunga) zinaweza kubadilishwa kuwa SiC kwa kupasha joto katika kaboni iliyozidi kutoka kwenye nyenzo za kikaboni.Moshi wa silika, ambao ni zao la kuzalisha chuma cha silicon na aloi za ferrosilicon, pia unaweza kubadilishwa kuwa SiC kwa kupasha joto na grafiti ifikapo 1,500 °C (2,730 °F).
F12-F1200, P12-P2500
0-1mm, 1-3mm, 6/10, 10/18, 200mesh, 325mesh
Vipimo vingine maalum vinaweza kutolewa kwa ombi.
Grit | Sic | FC | Fe2O3 |
F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
Grits | Wingi Wingi (g/cm3) | Msongamano wa Juu (g/cm3) | Grits | Wingi Wingi (g/cm3) | Msongamano wa Juu (g/cm3) |
F16 ~ F24 | 1.42~1.50 | ≥1.50 | F100 | 1.36~1.45 | ≥1.45 |
F30 ~ F40 | 1.42~1.50 | ≥1.50 | F120 | 1.34~1.43 | ≥1.43 |
F46 ~ F54 | 1.43~1.51 | ≥1.51 | F150 | 1.32~1.41 | ≥1.41 |
F60 ~ F70 | 1.40~1.48 | ≥1.48 | F180 | 1.31~1.40 | ≥1.40 |
F80 | 1.38~1.46 | ≥1.46 | F220 | 1.31~1.40 | ≥1.40 |
F90 | 1.38~1.45 | ≥1.45 |
Ikiwa una maswali yoyote. Tafadhali jisikie huru kuwasiliana nasi.